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1 cmpa801b025 25 w, 8.5 - 11.0 ghz, gan mmic, power amplifer crees cmpa801b025 is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic is available in a 10-lead metal/ceramic fanged package (cmpa801b025f) or small form- factor pill package (cmpa801b025p) for optimal electrical and thermal performance. r e v 3 . 2 C j a n u a r y 2 0 1 6 typical performance over 8.5-11.0 ghz (t c = 25?c) parameter 8.5 ghz 10.0 ghz 11.0 ghz units output power 1 38.0 37.0 35.5 w output power 1 45.8 45.7 45.5 dbm power added effciency 1 37.0 36.0 35.0 % note 1 : measured in CMPA801B025F-AMP under 100 us pulse width, 10% duty. features ? 8.5 - 11.0 ghz operation ? 37 w p out typical ? 16 db power gain ? 36 % typical pae ? 50 ohm internally matched ? <0.1 db power droop applications ? marine radar ? communications ? satellite communication uplink pn: cmpa801b025f/ cmpa801b025p package type: 440208 / 440216 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c power dissipation p diss 77 w storage temperature t stg -55, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 13 ma 25?c soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 1.22 ?c/w pulse width = 100 s, duty cycle = 10%, p diss = 55 w thermal resistance, junction to case r jc 1.80 ?c/w cw, p diss = 55 w, 85?c case operating temperature t c -40, +130 ?c pulse width = 100 s, duty cycle = 10%, p diss = 55 w case operating temperature t c -40, +90 ?c cw, p diss = 55 w note: 1 refer to the application note on soldering at www.cree.com/ rf/document-library electrical characteristics (frequency = 8.5 ghz to 11.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 13.2 ma gate quiscent voltage v q C -2.7 C v v ds = 28 v, i d = 1.2 a saturated drain current 2 i ds 10.6 13.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 13.2 ma rf characteristics 3 small signal gain s21 20 24 C db v dd = 28 v, i dq = 1.2 a, p in = -20 dbm input return loss s11 C C6.0 C db v dd = 28 v, i dq = 1.2 a output return loss s22 C C6.0 C db v dd = 28 v, i dq = 1.2 a output mismatch stress vswr C C 5:1 y no damage at all phase angles, v dd = 28 v, i dq = 1.2 a, pulse width = 100 s, duty cycle = 10%, p in = 30 dbm notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured in the CMPA801B025F-AMP. cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 electrical characteristics continued... (t c = 25?c) characteristics symbol min. typ. max. units conditions rf characteristics 1,2 output power p out1 44.75 45.8 C dbm v dd = 28 v, i dq = 1.2 a, frequency = 8.5 ghz, p in = 30 dbm output power p out2 44.75 45.7 C dbm v dd = 28 v, i dq = 1.2 a, frequency = 10.0 ghz, p in = 30 dbm output power p out3 44.35 45.5 C dbm v dd = 28 v, i dq = 1.2 a, frequency = 11.0 ghz, p in = 30 dbm power gain g 1 14.75 15.8 C db v dd = 28 v, i dq = 1.2 a, frequency = 8.5 ghz, p in = 30 dbm power gain g 2 14.75 15.7 C db v dd = 28 v, i dq = 1.2 a, frequency = 10.0 ghz, p in = 30 dbm power gain g 3 14.35 15.5 C db v dd = 28 v, i dq = 1.2 a, frequency = 11.0 ghz, p in = 30 dbm power added effciency pae 1 29 37 C % v dd = 28 v, i dq = 1.2 a, frequency = 8.5 ghz, p in = 30 dbm power added effciency pae 2 29 36 C % v dd = 28 v, i dq = 1.2 a, frequency = 10.0 ghz, p in = 30 dbm power added effciency pae 3 27 35 C % v dd = 28 v, i dq = 1.2 a, frequency = 11.0 ghz, p in = 30 dbm pulse amplitude droop d C 0.1 C db v dd = 28 v, i dq = 1.2 a, frequency = 8.5 - 11.0 ghz, p in = 30 dbm notes: 1 pulse width = 100 s, duty cycle = 10 %. 2 measured in CMPA801B025F-AMP. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 cmpa801b025f typical performance figure 1. - output power, gain and power added effciency vs. frequency v dd = 28 v, p in = 30 dbm, i dq = 1.2 a pulse width = 100 s, duty cycle = 10 % figure 2. - output power, gain and power added effciency vs. frequency v dd = 28 v, i dq = 1.2 a, cw p sat (i g 1.5ma) 20% 25% 30% 35% 40% 45% 50% 20 25 30 35 40 45 50 effi c i e n c y (% ) po w e r (w , d b m ) g a i n (d b ) pulsed data 100us 10% vdd=28v pin=30dbm idq=1200ma 0% 5% 10% 15% 20% 0 5 10 15 20 7500 8000 8500 9000 9500 10000 10500 11000 11500 effi c i e n c y (% ) po w e r (w , d b m ) g a i n (d b ) frequency (mhz) output power (w) gain (db) output power (dbm) pae (%) 25% 30% 35% 40% 45% 50% 25 30 35 40 45 50 ef f i ci en cy ( % ) po w er ( w , d b m) gai n ( d b ) c w ps a t ( i g 1 . 5 m a ) vd =2 8 v i d q =1 2 0 0 m a 0% 5% 10% 15% 20% 0 5 10 15 20 7500 8000 8500 9000 9500 10000 10500 11000 11500 ef f i ci en cy ( % ) po w er ( w , d b m) gai n ( d b ) frequency (mhz) cw psat power (w) cw psat power (dbm) cw psat gain (db) cw psat pae (%) cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 cmpa801b025f typical performance figure 3. - output power, gain and power added effciency vs. input power v dd = 28 v, i dq = 1.2 a, frequency = 11 ghz figure 4. - small signal s-parameters vs. frequency 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 50% 0 5 10 15 20 25 30 35 40 45 50 16 18 20 22 24 26 28 30 32 ef f i ci en cy % po w er ( w , d b m) gai n ( d b ) input power (dbm) output power (dbm) output power (w) gain (db) pae % 0 10 20 30 s1 1 (d b ), s2 1 (d b ), s2 2 (d b ) small signal s-parameters vs. frequency -30 -20 -10 6000 7000 8000 9000 10000 11000 12000 s1 1 (d b ), s2 1 (d b ), s2 2 (d b ) frequency (mhz) s(2,1) s(1,1) s(2,2) cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 cmpa801b025f typical performance figure 5. - power dissipation derating curve note 1. area exceeds maximum case operating temperature (see page 2). 40 50 60 70 80 90 po w er d i ssi p ati o n ( w ) cmpa801b025f power dissipation de-rating curve 0 10 20 30 40 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum case temperature ( c) derating curve pulsed 10% 100us derating curve cw ` note 1 cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 CMPA801B025F-AMP demonstration amplifer circuit bill of materials designator description qty c15 cap elect 100uf 80v afk smd 1 r1, r2 res 0.0 ohm 1/16w 0402 smd 2 w1 wire, black, 22 awg ~ 1.50 1 w2 wire, black, 22 awg ~ 1.75 1 w3 wire, black, 22 awg ~ 2.0 1 j1,j2 connector, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j3 connector, header, rt>plz .1cen lk 9pos 1 j4 connector, smb-u surface mount 1 - pcb, test fixture, taconics rf35p, 20 mils, 440208 pkg 1 - 2-56 soc hd screw 1/4 ss 4 - #2 split lockwasher ss 4 q1 cmpa801b025f 1 CMPA801B025F-AMP demonstration amplifer circuit cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 CMPA801B025F-AMP demonstration amplifer circuit schematic CMPA801B025F-AMP demonstration amplifer circuit outline cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 CMPA801B025F-AMP demonstration amplifer circuit schematic to confgure the cmpa801b025f test fxture to enable independent v g1 / v g2 control of the device, a cut must be made to the microstrip line just above the r1 resistor as shown. pin 9 will then supply v g1 and pin 8 will supply v g2 . cmpa801b025f typical performance figure 7. - transient thermal performance t case = 85c 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 t h e ta j c ( ? c / w ) x-band mmic on 440208 pkg, .25" thk cu fixture, tcase=85 ? c 10% duty cycle 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 t h e ta time (seconds) 10% duty cycle 20% duty cycle 50% duty cycle cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 product dimensions cmpa801b025f (package type 440208) pin number qty 1 gate bias for stage 2 2 gate bias for stage 2 3 rf in 4 gate bias for stage 1 5 gate bias for stage 1 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias 11 source cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 product dimensions cmpa801b025p (package type 440216) pin number qty 1 gate bias for stage 2 2 gate bias for stage 2 3 rf in 4 gate bias for stage 1 5 gate bias for stage 1 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias 11 source cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
12 part number system parameter value units lower frequency 8.5 ghz upper frequency 1 11.0 ghz power output 25 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line cmpa801b025f cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
13 product ordering information order number description unit of measure image cmpa801b025f gan hemt each cmpa801b025p gan hemt each cmpa801b025f-tb test board without gan hemt each CMPA801B025F-AMP test board with gan hemt installed each cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
14 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cmpa801b025 rev 3.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.

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